c opyright ruichips semiconductor co . , ltd rev . a C mar ., 2012 www. ruichips .com ru 3 0 4 b n - channel advanced power mosfet mosfet features pin description applications symbo l parameter rating unit common ratings ( t a =25 c unless otherwise noted) v dss drain - source voltage 3 0 v gss gate - source voltage 12 v t j maximum junction temperature 1 50 c t stg storage temperature range - 55 to 1 50 c i s diode continuous forward curre nt t a =25 c 1.1 a mounted on large heat sink i d p 300 s pulse drain current tested t a =25 c 15 a t a =25 c 4 i d continuous drain current ( v gs =4.5 v) t a = 7 0 c 2. 9 a t a =25 c 1 p d maximum power dissipation t a = 7 0 c 0.64 w r q j a thermal resistance - junct ion to ambient 125 c /w ? 3 0 v/ 4 a, r ds ( on ) = 44m w (typ.) @ v gs = 4.5 v r ds ( on ) = 53 m w (typ.) @ v gs = 2.5 v ? low r ds (on) ? super high dense cell design ? reliable and rugged ? lead free and green available ? load/system switch absolute maximum ratings sot - 23 n - channel mosfe t
c op yright ruichips semiconductor co . , ltd rev . a C mar ., 2012 2 www. ruichips .com ru 304 b electrical characteristics ( t a =25 c unless otherwise noted) r u 304 b symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - sourc e breakdown voltage v gs =0v, i ds =250 m a 30 v v ds = 3 0 v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 30 m a v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 0.5 - 1.5 v i gss gate leakage current v gs = 12 v, v ds =0v 1 0 0 n a v gs = 4.5 v, i ds = 4 a 44 60 m w r ds ( on ) drain - source on - state resistance v gs = 2.5 v, i ds = 2 a 53 80 m w notes : pulse width limited by safe operating area. when mounted on 1 inch square copper boa rd , t 10sec . the value in any given application depends on the user's specific board design. pulse test ; p ulse width 3 00 m s , duty cycle 2% . guaranteed by design, not subject to production testing . d iode characteristics v sd diode forward voltage i sd = 1 a, v gs =0v 1 v t rr reverse recovery time 1 3 ns q rr reverse recovery charge i sd = 2 a, dl sd /dt=100a/ m s 4 nc dynamic characteristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 0.8 w c iss input capacitance 2 1 0 c oss output capacitance 3 2 c rss reverse transfer capacitance v gs =0v, v ds = 15 v, frequency=1.0mhz 19 pf t d ( on ) turn - on delay time 6 t r turn - on rise time 1 0 t d ( off ) turn - off delay time 1 5 t f turn - off fall time v dd = 1 5 v, r l = 7.5 w , i ds = 2 a, v gen = 4.5 v, r g = 1 w 7 ns gate charge characteristics q g total gate charge 4 q gs gate - source charge 0 . 5 q gd gate - drain charge v ds = 24 v, v gs = 4.5 v, i ds = 2 a 1 . 2 nc
c op yright ruichips semiconductor co . , ltd rev . a C mar ., 2012 3 www. ruichips .com ru 304 b typical characteristics power dissipation drain current p tot - power ( w) i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transient v ds - drain - source voltage (v) square wave pulse duration ( sec )
c op yright ruichips semiconductor co . , ltd rev . a C mar ., 2012 4 www. ruichips .com ru 304 b typical characteristics output characteristics drain - source on resistance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current (a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c)
c op yright ruichips semiconductor co . , ltd rev . a C mar ., 2012 5 www. ruichips .com ru 304 b typical characteristics drain - source on resistance source - drain diode forward normalized on resistance i s - source current (a) t j - junction tempera ture (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc)
c op yright ruichips semiconductor co . , ltd rev . a C mar ., 2012 6 www. ruichips .com ru 304 b avalanche test circuit an d waveforms switching time test circuit and waveforms
c op yright ruichips semiconductor co . , ltd rev . a C mar ., 2012 7 www. ruichips .com ru 304 b ordering and marking information device marking package packaging quantity reel size tape width ru 304 b 6 x yww sot - 23 tape&reel 3000 7 8m m the following characters could be different and means: x =assembly site code y =year ww =work week
c op yright ruichips semiconductor co . , ltd rev . a C mar ., 2012 8 www. ruichips .com ru 304 b package information sot - 23 all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min max min max symbol min max mi n max a 0.900 1.150 0.035 0.045 e1 2.250 2.550 0.089 0.100 a1 0.000 0.100 0.000 0.004 e 0.950 typ. 0.037 typ. a2 0.900 1.050 0.035 0.041 e1 1.800 2.000 0.071 0.079 b 0.300 0.500 0.012 0.020 l 0.550 ref. 0.022 ref. c 0.080 0.150 0.003 0.006 l1 0.300 0. 500 0.012 0.020 d 2.800 3.000 0.110 0.118 0 8 0 8 e 1.200 1.400 0.047 0.055
c op yright ruichips semiconductor co . , ltd rev . a C mar ., 2012 9 www. ruichips .com ru 304 b customer service worldwide sales and service : sales@ru i chips.com technical s upport : technical@ruichips.com investor relations contacts : investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal co ntact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : ( 86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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